2025

• Unveiling the effects of Sb or Bi doping on lattice strain and Raman spectra in Mg2Si single crystals

• Kosuke Shimano, Shunya Sakane, Takehiro Ota, Kenichiro Takakura, Motoharu Imai, Haruhiko Udono

• J. Appl. Phys 137 215109 (2025). (Open Access)DOI:10.1063/5.0273439

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• Fabrication of Mg2Si linear photodiode arrays for SWIR imaging

• Haruhiko Udono, Kaito Ojima, Naoki Imaizumi, Hideto Takei, Shunya Sakane

• Proc. of SPIE, Optical Components and Materials XXII, 13362, 133620I (2025). DOI:10.1117/12.3042531

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• Molecular interaction-induced thermoelectric performance enhancement of graphene thin films with an agglomerated conductive polymer

• Keito Uchida, Shunya Sakane, Takashi Shimizu, Akito Ayukawa, Haruhiko Udono, Hideki Tanaka

  Materials Advances 6, 4874-4880 (2025). (Open Access) DOI:10.1039/d5ma00454c

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• Strontium disilicide SrSi2: Narrow band gap semiconductor or Weyl semimetal?

• Motoharu Imai, Haruhiko Udono, Babak Alinejad, Takayuki Nakane, Hiroki Takahashi, Masao Arai

• J. Alloys Comp., 1032, 181074 (2025). DOI:10.1016/j.jallcom.2025.181074

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2024

• Evaluation of Mg2Si TPV cells fabricated on n-Mg2Si substrate by thermal diffusion of Ag acceptor. 
• Takumi Shimizu, Daisuke Miyago, Kosuke Shimano, Shunya Sakane, Haruhiko Udono
• Jpn. J. Appl. Phys 63 12SP17 (2024). DOI:10.35848/1347-4065/ad9ab1

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• Record High Thermoelectric Figure of Merit of a III‑V Semiconductor InGaSb by Defects Engineering via the Addition of Excess Constituent Elements
• Nirmal Kumar Velu, Yasuhiro Hayakawa, Haruhiko Udono, Shunya Sakane, Yuko Inatomi
• ACS Appl. Mater. Interfaces 16, 46433-46441 (2024). DOI:10.1021/acsami.4c08686
  

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• Epitaxial growth of high-quality Mg3Sb2 thin films on annealed c-plane Al2O3 substrates and their thermoelectric properties
• Akito Ayukawa, Nozomu Kiridoshi, Wakaba Yamamoto, Akira Yasuhara, Haruhiko Udono and Shunya Sakane
  Appl. Phys. Express 17, 065501 (2024). (Open Access) DOI:10.35848/1882-0786/ad4f4c
  

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• Precise synthesis of copper selenide nanowires with tailored Cu vacancies through photo-induced reduction for thermoelectric applications
• Shunya Sakane, Tatsuki Miura, Kazuki Munakata, Yusuke Morikawa, Shunichiro Miwa, Riku Yamanaka, Toshiki Sugai, Akito Ayukawa, Haruhiko Udono, and Hideki Tanaka,
  Nanoscale Adv., 6, 3299 (2024). (Open Access) DOI:10.1039/D4NA00156G
  

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2023

• Control of Ag acceptor concentration and pn-junction depth in single crystalline Mg2Si photodiodes(Featured Article)
  Shunya Sakane, Haruhiko Udono
  AIP Adv. 13, 105307 (2023).  (Open Access) DOI:10.1063/5.0172011
  

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• Effects of Te-doping on the thermoelectric properties of InGaSb crystals
• Nirmal Kumar Velu, Yasuhiro Hayakawa, Haruhiko Udono, and Yuko Inatomi
• J Mater Sci: Mater Electron 34, 1480(2023). DOI:10.1007/s10854-023-10900-1

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• Effects of Te-doping on the thermoelectric properties of InGaSb crystals
  N.K.Velu, Y. Hayakawa, H. Udono, Y. Inatomi
• Journal of Materials Science: Materials in Electronics, 34, 341480(2023). DOI:10.1007/s10853-023-08546-9

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• Analysis of grain growth behavior of multicrystalline Mg2Si
  Takumi Deshimaru, Kenta Yamakoshi, Kentaro Kutsukake, Takuto Kojima, Haruhiko UDONO, and Noritaka Usami
  Jpn. J. Appl. Phys., 62, SD1002(2023). (Open Access) DOI: 10.35848/1347-4065/aca032

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• Study of deep levels in the Mg2Si grown by vertical Bridgman method
  Kouki Fukushim, Naoki Mizunuma, Tatsuya Uematsu, Kyoko Shimizu, Takehiro Ota, Isao Tsunoda, Haruhiko UDONO and Kenichiro Takakura
  Jpn. J. Appl. Phys., 62, SD1012(2023). (Free Article) DOI: 10.35848/1347-4065/aca8b3

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2022

• Silicon meets group-II metals in energy and electronic applications -How to handle reactive sources for high-quality films (Invited Tutorial)
  T. Suemasu, K. O. Hara, H. UDONO, M. Imai
  J. Appl. Phys., 131, 191101 (2022).  https://doi.org/10.1063/5.0092080

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• Effects of dopant type and concentration on surface recombination velocity in hydrogen- terminated silicon
  Nobue Araki and Haruhiko UDONO
  Jpn. J. Appl. Phys., 61, 095504(2022).https://doi.org/10.35848/1347-4065/ac829a

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• Mg2Si 基板開発と赤外線センサへの展開 （解説）
  鵜殿治彦
  レーザー研究, 50, (2022) pp. 570-574.

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2021

• Local structure analysis of Sb, Bi, and Ag dopant atoms in Mg2Si semiconductor by X-ray absorption spectroscopy and first- principles calculation (Editor's Pick)
  M. Kitaura, S. Wantanabe, T. Ina, M. Imai, H. UDONO, M. Ishizaki, H. Yamane, T. Tanimoto, and A. Ohnishi
  J. Appl. Phys., 130, 245105 (2021).

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• Single crystal growth of small-angle-grain-boundary-free Mg2Si via vertical Bridgman method
  R. Masubuchi, B. Alinejad, Y. Hara, H. UDONO
  J. Crystal Growth., 571, 126258 (2021).

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• Evaluation of Magnesium Tin Silicide Sintered Bodies Prepared by Liquid-Phase Pressure-Less Sintering
  H. Inoue, M. Kato, H. UDONO and T. Kobayashi
  Materials Transaction, 62, 661 (2021).

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2020

• Interface driven energy-filtering and phonon scattering of polyaniline incorporated ultrathin layered molybdenum disulphide nanosheets for promising thermoelectric performance
  R. Abinaya a, J. Archana, S. Harish, M. Navaneethan, C. Muthamizhchelvan, S. Ponnusamy, H. UDONO, R. Sugahara, Y. Hayakawa, M. Shimomura
  J. Colloid and Interface Science, 584, 295-309 (2020).

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• Power Generation Efficiency of Thermoelectric Elements with a Trapezoidal Section
  H. Inoue, H. UDONO, M. Kato and T. Kobayashi
  J. Electric Materials, 50, 346-351 (2020).

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• First principle band calculations of Mg2Si thin films with (001) and (110) orientations
  M. Takizawa, T. Komine, H. UDONO, T. Aono
  JJAP Conf. Proc., 8, 011101 (2020). 

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• Observation of Magnesium-Induced Crystallization (Mg-MIC) of a-Si Thin Film
  T. Ikehata, R. Sasajima, M. Saijo, N. Sato and H. UDONO
  JJAP Conf. Proc., 8, 011102 (2020).

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2019

• Enhanced thermoelectric properties of InSb: Studies on In/Ga doped GaSb/InSb crystals
  V. Nirmal Kumar, Y. Hayakawa, H. UDONO, Y. Inatomi
  Intermetallics., 105, 21 (2019); doi: 10.1016/j.intermet.2018.11.006

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• An Approach to Optimize the Thermoelectric Properties of III–V Ternary InGaSb Crystals by Defect Engineering via Point Defects and Microscale Compositional Segregations
  V. Nirmal Kumar, Y. Hayakawa, H. UDONO, Y. Inatomi
  Inorg. Chem., 58, 11579 (2019).

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• Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy
  M. Nakamura, S. Murakami and H. UDONO
  Appl. Phys. Express, 12, 021005 (2019).

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• マグネシウムシリサイドを用いた環境調和型赤外フォトダイオード（研究紹介）
  鵜殿治彦
  応用物理　 88 (2019)797.　 我々のデータが12月号の表紙を飾りました

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2018

• Characterization of iron in silicon by low-temperature photoluminescence and deep- level transient spectroscopy
  Minoru Nakamura, Susumu Murakami and Haruhiko UDONO
  J. Appl. Phys., 123, 105101 (2018); doi: 10.1063/1.5019958.

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• Evaluation of carrier lifetime in Mg2Si pn-juction photodiode using OCVD method
  Haruhiko UDONO and Fumiya Takahashi
  Proceedings of 8th Silicon Forum, Okayama (2018) PD10.

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• 赤外センサ用 Mg2Si 結晶の融液成長（解説）
  鵜殿治彦
  日本結晶成長学会誌., 45, 45-3-03 (2018); ISSN0385-6275.

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2017

• Crystal growth of Mg2Si for IR-detector spectroscopy
  Toshio Tokairin, Junya Ikeda, Haruhiko Udono
  J. Crystal Growth 468 (2017) 761–765. http://dx.doi.org/10.1016/j.jcrysgro.2016.12.004

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• Influence of Humidity, Volume Density, and MgO Impurity on Mg2Si Thermoelectric-Leg
  Y. MITO, A. OGINO, S. KONNO, and H. UDONO
  J. Electron. Mater., 46 (2017)3103-3108. DOI: 10.1007/s11664-016-5182-1

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• Observation of pn-junction depth in Mg2Si diodes fabricated by short period thermal annealing
  Y. Onizawa, T. Akiyama, N. Hori, F. Esaka and Haruhiko Udono
  JJAP Conf. Proc. 5, 011101 (2017) https://doi.org/10.7567/JJAPCP.5.011101.

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• Fabrication of Mg2Si pn-junction Photodiode with Shallow Mesa-structure and Ring Electrode
  T. Akiyama, N. Hori, S. Tanigawa, D. Tsuya and Haruhiko Udono
  JJAP Conf. Proc. , 011102 (2017) https://doi.org/10.7567/JJAPCP.5.011102.

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• Oxidation resistance of impurity doped Mg2Si grown from the melt
  Shu Konno, Tsubasa Otubo, Kohei Nakano and Haruhiko Udono
  JJAP Conf. Proc. 5, 011301 (2017) https://doi.org/10.7567/JJAPCP.5.011301.

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• Optical transmittance and reflectance studies and evidence of weak electron–phonon interaction in Type-I Ge clathrate Ba8Ga16Ge30
  Haruhiko Udono, Motoharu Imai, Shuhei Kojima, Tetsuji Kume, Katsumi Tanigaki, and Hiroyuki Tajima
  J. Appl. Phys., 121, 175105 (2017); doi: 10.1063/1.4983076.

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2016

• Transformation of the nickel donor center by annealing in silicon measured by deep-level transient spectroscopy
  Minoru Nakamura, Susumu Murakami, and Haruhiko Udono
  Jpn. J. Appl. Phys, 55 (2016) 011302.

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• X-ray photoelectron spectroscopy studies on single crystalline β-FeSi 2
  Wei Mao, Haruhiko Udono, Kenji Yamaguchi, Takayuki Terai, Hiroyuki Matsuzaki
  Thin Solid Films, 606 (2016) pp1-6.

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• Thin film of guest-free type-II silicon clathrate on Si(111) wafer
  T. Kume, F. Ohashi, K. Sakai, A. Fukuyama, M. Imai, H. Udono, T. Ban, H. Habuchi, H. Suzuki, T. Ikari, S. Sasaki, S. Nonomura
  Thin Solid Films, 609 (2016) p30-34.

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• Effects of varying indium composition on the thermoelectric properties of In xGa 1-xSb ternary alloys
  V. Nirmal Kumar, M. Arivanandan, T. Koyoma, H. Udono, Y. Inatomi, Y. Hayakawa
  Appl. Phys. A 122(2016)885. DOI 10.1007/s00339-016-0409-9.

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• Non-destructive depth analysis of the surface oxide layer on Mg 2Si with XPS and XAS
  Fumitaka Esaka, Takehiro Nojima, Haruhiko Udono, Masaaki Magara and Hiroyuki Yamamoto
  Surf. Interface Anal., 48 (2016) pp.432-435. 

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• シリサイド系熱電変換材料の研究開発 (総説)
  鵜殿治彦
  日本材料科学誌　材料の科学と工学　53 (2016) pp.74-77.

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2015

• Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing
  M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono
  Phys. Status Solidi A, 1–7 (2015) / DOI 10.1002/pssa.201431777.

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• Growth and characterization of Mg2Si crystals for IR detectors and thermoelectric applications
  H. Udono, H. Tajima, M. Uchikoshi, M. Itakura
  Jap. J. Appl. Phys., 54 (2015) 07JB06. 

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• Fabrication and Characterization of Mg2Si pn-junction Photodiode with a Ring Electrode
  K. Daitoku, M. Takezaki, S. Tanigawa, D. Tsuya, H. Udono
  JJAP Conf. Proc., 3 (2015) 011103.

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• Band structure characterization of K8Ga8Si38 clathrates by optical measurement
  M. Iioka, H. Udono, M. Imai, and M. Aoki
  JJAP Conf. Proc., 3 (2015) 011201.

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• Thermal expansion of semiconducting silicides b-FeSi2 and Mg2S
  Motoharu Imai, Yukihiro Isoda, Haruhiko Udono
  Intermetallics 67 (2015) 75 -80.

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2014

• シリサイド系半導体の科学と技術-資源･環境時代の新しい半導体と関連物質-
  鵜殿治彦（前田佳均　編著）
  裳華房（2014）執筆 pp.37-47, 187-197.

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• 熱電変換材料　実用･活用を目指した設計と開発
  "シリサイド半導体による熱電変換デバイス作製に向けた取り組みと課題”
  鵜殿治彦（分担執筆）
  情報機構　ISBN 978-4-86802-074-8,（2014）執筆pp.205-222.

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• Convenient Melt-Growth Method for Thermoelectric Mg2Si
  K. Kambe and H.UDONO
  J. Electron. Mat.,43 (2014) 2212-2217.

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• Depth profiles of the nickel donor center in p-type silicon diffused with dilute nickel measured by deep-level transient spectroscopy
  M.Nakamura, S. Murakami, and H. UDONO
  Jpn. J. Appl. Phys., 53 (2014) 091301.

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• Surface aspects of discolouration in Bisphenol A Polycarbonate (BPA-PC), used as lens in LED-based products
  M. Yazdan Mehr, W.D. van Driel, H. UDONO, G.Q. Zhang
  Optical Materials 37 (2014) 155-159.

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2013

• シリサイド系熱電材料の開発(第4章第1節1.1)
  鵜殿治彦
  サーマルマネージメント-余熱・排熱の制御と有効利用-,　エヌ･ティー･エス, (2013)208-246.

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• Thermoelectric properties of Na-doped Mg2Si0.25Sn0.75
  S. Tada, Y. Isoda, H. UDONO, H. Fujiu, S. Kumagai and Y. Shinohara
  Trans. Mat. Res. Soc. Jpn., 38 (2013) 17-22.

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• Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion
  H.UDONO, Y. Yamanaka, M. Uchikoshi and M. Isshiki
  J. Phys. Chem. Sol., 74 (2013)311-314. 

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• Energy level(s) of the dissociation product of the 1.014eV photoluminescence copper center in n-type silicon determined by photoluminescence and deep-level transient spectroscopy
  M.Nakamura, S. Murakami, and H. UDONO
  J. Appl. Phys., 114 (2013) 033508.

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• Thermoelectric properties of p-type Mg2Si0.25Sn0.75 doped with sodium acetate and metallic sodium
  S. Tada, Y. Isoda, H. UDONO, H. Fujiu, S. Kumagai and Y. Shinohara,
  J. Electron. Mat.,43 (2013) 1580-1584.

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• Preparation and thermoelectric properties of Mg2Si0.9-xSnxGe0.1
  S. Tada, Y. Isoda, H. UDONO, H. Fujiu, S. Kumagai and Y. Shinohara,
  Phys. Stat. Sol (c), 10 (2013) 1704-1707.

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• Solid-phase growth of Mg2Si by an- nealing in inert gas atmosphere
  T. Ikehata, T. Ando, T. Yamamoto, Y. Takagi, N. Sato, and H. UDONO
  Phys. Stat. Sol (c), 10 (2013) 1708-1711.

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• Solid evidence for magnetic moment enhancement in micro-particles of Mn11Si19
  K. Hammura, H. UDONO, T. Aono
  Phys. Stat. Sol (c), 10 (2013) 1735-1738.

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• Solution growth and optical characterization of Mn11Si19
  M. Iioka, D. Ishida, S. Kojima and H. UDONO
  Phys. Stat. Sol (c), 10 (2013) 1808-1811.

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• Spectral characterization of Mg2Si pn-junction diode depended on RTA periods
  M. Takezaki, Y. Yamanaka, M. Uchikoshi, H. UDONO
  Phys. Stat. Sol (c), 10 (2013) 1812-1814.

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2012

• Preparation and thermoelectric properties of Iron Disilicide
  Y. ISODA and H.UDONO
  CRC Handbook “Thermoelectrics and its Energy Harvesting” edited by D. Rowe, Chap.18, CRC Press (2012) .

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• Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy
  M. Nakamura, S. Murakami, and H.UDONO
  Appl. Phys. Lett., 101 (2012)042113.

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• 見直され始めたシリサイド系熱電材料（解説）
  鵜殿治彦
  日本熱電学会誌、第8巻，第3号3-6、2012年.

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• Transformation reactions of copper centers in the space-charge region of a copper-diffused silicon crystal measured by deep-level transient spectroscopy
  M.Nakamura, S. Murakami, and H.UDONO
  J. Appl. Phys., 112 (2012)063530.

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• Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy
  K.Noda, Y. Terai, N. Miura, H.UDONO and Y. Fujiwara
  Phys. Proc., 23 (2012)5-8.

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2011

• Magnetisation of bulk Mn11Si19 and Mn4Si7
  K. Hammura, H. Udono, I. J. Ohsugi , T. Aono , E. De Ranieri
  Thin Solid Films, 519 (2011) 8516-8519.

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• Band-gap Modifications of β-FeSi2 Epitaxial Films by Lattice Deformations
  Y. Terai, K. Noda, K. Yoneda, H. Udono, Y. Maeda, and Y. Fujiwara
  Thin Solid Films, 519 (2011) 8468-8472.

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• Photoemission study on the valence band of a ß-FeSi2 thin film using synchrotron radiation
  H. Fujimoto, K. Ogawa, K. Takarabe, H. Udono, H. Sugiyama, J. Azuma, K. Takahashi and M. Kamada
  Dalton Trans, 40 (2011)6023-6027.

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• Semiconducting behavior of type-I Si clathrate K8Ga8Si38
  M. Imai, A. Sato, H. Udono, Y. Imai, H. Tajima
  Dalton Trans. 40 (2011) 4045-4047.

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• Solution Growth and Thermoelectric Properties of Single-Phase MnSi1.75−x
  H. Udono, K. Nakamori, Y. Takahashi, Y. Ujiie, I. J. Ohsugi and T. Iida
  J. Electron. Mat. 40 (2011) 1165-1170.

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• Surface analysis of single-crystalline β-FeSi2
  Y. Yamada, W. Mao, H. Asaoka, H. Yamamoto, F. Esaka, H. Udono and T. Tsuru
  Phys. Proc. 11(2011) 67-70.

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• Electrical Properties of Ca2Si Sintered Compact Synthesized by Spark Plasma Sintering
  C.Wen, T. Nonomura, A. Kato, Y. Kenichi, H. Udono, K. Isobe, M. Otake, Y.Kubota, T. Nakamura, Y. Hayakawa, and H. Tatsuoka
  Phys. Proc. 11(2011) 106-109. 

  ---

• Surface characterization of homoepitaxial β-FeSi2 film on β-FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy
  F.Esaka, H. Yamamoto, H. Udono, N. Matsubayashi, K. Yamaguchi, S. Shamoto, M. Magara and T. Kimura
  Phys. Proc. 11(2011) 150-153.

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• Preparation of schottky contacts on n-type Mg2Si single crystalline substrate
  K.Sekino, M.Midonoya, H. Udono, Y. Yamada
  Phys. Proc. 11(2011) 171-173.

  ---

• Surface structures of β-FeSi2 formed by heat-treatment in ultra-high vacuum and their influence on homoepitaxial growth
  S. Matsumura, K. Ochiai, H. Udono, F. Esaka, K. Yamaguchi, H. Yamamoto, K. Houjo
  Phys. Proc. 11(2011) 174-176.

  ---

• Effect of temperature modulation during temperature gradient solution growth of β-FeSi2
  Y. Ujiie, K. Nakamori, S. Mashiko, H. Udono, T. Nagata
  Phys. Proc. 11(2011) 177-180.

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2009

• The local structure of α-FeSi2 under high pressure
  Y.Mori, H. Nakano, G. Sakane, G. Aquilanti, H. Udono, K. Takarabe
  Phys. stat. sol. (b), 246(2009) 541-543.

  ---

• Fluorescence EXAFS study of residual Ga in β-FeSi2 grown from Ga solvent
  H.Yamada, M.Tabuchi, Y.Takeda, and H.UDONO
  J. Phys. Conf., 190(2009)012069.

  ---

2008

• Surface preparation and characterization of single crystalline ß -FeSi2
  Y.Yamada, I. Wakaya, S. Ohuchi, H. Yamamoto, H. Asaoka, S. Shamoto, H. Udono
  Surface Science 602(2008) 3006-3009.

  ---

• Crystal growth of ZnO bulk by CVT method using PVA
  Haruhiko Udono,Yusuke Sumi, Shyuji Yamada, and Isao Kikuma
  J.Crystal Growth, 310(2008) 1827-1831. 

  ---

• Solution Growth and Low-Temperature Thermoelectric Properties of Single Crystalline ß-FeSi2
  H. Udono, H. Suzuki, K. Goto, S. Mashiko, M. Uchikoshi and M. Issiki
  Proceedings of Int. Conf. Thermoelectrics, Cheju , 241.

  ---

2007

• Polarized optical reflection study on single crystalline ß-FeSi2
  Haruhiko Udono, Isao Kikuma, Hiroyuki Tajima , Kenichi Takarabe
  J. Mat. Sci.: Mat. in Electron., 18(2007)S65-S69.

  ---

• Single crystalline ß-FeSi2 grown using high-purity FeSi2 source
  Kouhei Gotoh, Hirokazu Suzuki, Haruhiko Udono, Isao Kikuma, Fumitaka Esaka, Masahito Uchikoshi and Minoru Isshiki
  Thin Solid Films, 515(2007)8263-8268.

  ---

• Melt growth and characterization of Mg2Si bulk crystals
  Daiki Tamura, Ryo Nagai, Kazuhiro Sugimoto, Haruhiko Udono, Isao Kikuma, Hiroyuki Tajima and Isao J. Ohsugi
  Thin Solid Films, 515(2007)8272-82786.

  ---

• Preparation of β-FeSi2 substrates by molten salt method
  M.Okubo, T. Ohishi, A. Mishina, I. Yamauchi, H. Udono, T. Suemasu, T. Matsuyama and H. Tatsuoka
  Thin Solid Films, 515(2007)8268-8272.

  ---

• Growth of β-FeSi2 thin films on β-FeSi2 (110) substrates by molecular beam epitaxy
  M.Muroga, H. Suzuki, H. Udono, I. Kikuma, A. Zhuravlev, K. Yamaguchi, H. Yamamoto and T. Terai
  Thin Solid Films, 515(2007)8197-8200.

  ---

• Novel photo-sensitive materials for hydrogen generation through photovoltaic electricity
  Kenji Yamaguchi, Haruhiko Udono
  International Journal of Hydrogen Energy, 32(2007)2726-2729.

  ---

• Solution Growth and Low-Temperature Thermoelectric Properties of Single Crystallineβ-FeSi2
  H. Udono, H. Suzuki, K. Goto, S. Mashiko, M. Uchikoshi and M. Issiki
  Proceedings of ICT2007, Cheju, Korea. 241-244.

  ---

• 半導体シリサイドの結晶成長と基礎物性（解説）
  鵜殿治彦　
  応用物理 76 (2007) 790-793.

  ---

2006

• Thermoeletric properties of solution grown β-FeSi2 single crystals
  Hirokazu Suzuki, Haruhiko Udono, Isao Kikuma
  Mater. Trans., 47(2006)1428-1431.

  ---

• Solution growth of n-type β-FeSi2 single crystals using Ni-doped Zn solvent
  H.Udono, Y. Aoki, H. Suzuki, I. Kikuma
  J.Crystal Growth, 292(2006)290-293.

  ---

• Effect of thermal annealing on the photoluminescence of β-FeSi2 films on Si substrate
  Kenji Yamaguchi, Kenichiro Shimura, Haruhiko Udono, Masato Sasase, Hiroyuki Yamamoto, Shin-ichi Shamoto, Kiichi Hojou
  Thin Solid Films, 508(2005)367-370.

  ---

2005

• High interband transitions in β-FeSi2 under pressure
  Yasunobu SUMIDA, Yoshihisa MORI, Kenichi TAKARABE, Haruhiko UDONO, Isao KIKUMA
  Jpn. J. Appl. Phys., 44(2005)7421-7423.

  ---

• Solution Growth of high quality p-type β-FeSi2 single crystals using Zn solvent
  Hauruhiko Udono, Yuta Aoki, Isao Kikuma, Hiroyuki Tajima, Isao J. Ohsugi
  J. Crystal Growth, 275(2004)e2003-e2007.

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• Solution growth of N-type β-FeSi2 single crystals using Sn-solvent
  Haruhiko Udono, Kazutaka Matsumura, Isao J. Osugi, Isao Kikuma
  J. Crystal Growth, 275(2004)e1967-e1974.

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2004

• Structural study of FeSi2 under pressure
  K. Takarabe, T. Ikai, Y. Mori, H. Udono, I. Kikuma
  J. Appl. Phys., 96(2004)4903. 

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• Indirect optical absorption of single crystalline β-FeSi2
  Haruhiko Udono, Isao Kikuma, Tsuyoshi Okuno, Yasuaki Masumoto, Hiroyuki Tajima
  Appl. Phys. Lett., 85(2004)1937-1939.

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• Reflection and absorption spectra of β-FeSi2 under pressure
  Y. Mori, Y. Sumida, K. Takarabe, T. Suemasu, F. Hasegawa, H. Udono, I. Kikuma.
  Thin Solid Films, 461(2004)171-173.

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• Raman spectra for β-FeSi2 bulk crystals
  Y. Maeda, H. Udono, Y. Terai
  Thin Solid Films, 461(2004)165-170.

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• Structural and electrical properties of β-FeSi2 single crystals grown using Sb solvent
  H. Kannou, Y. Saito, M. Kuramoto, T. Takeyama, T. Nakamura, T. Matsuyama, H. Udono, Y. Maeda, M. Tanaka, Z. Q. Liu, H. Tatsuoka, H. Kuwabara
  Thin Solid Films, 461(2004)110-115.

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• Thermal expansion of β-FeSi2 at low temperatures
  Y. Terai, H. Ishibashi, Y. Maeda, H. Udono
  Thin Solid Films, 461(2004)106-109.

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• Electrical properties of p-type β-FeSi2 single crystals grown from Ga and Zn solvents
  H. Udono, I. Kikuma
  Thin Solid Films, 461(2004)188-192.

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• Optical properties of β-FeSi2 single crystals grown from solutions
  H. Udono, I. Kikuma, T. Okuno, Y. Masumoto, H. Tajima, S. Komuro
  Thin Solid Films, 461(2004)182-187. 

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• Anisotropy of refractive index of β-FeSi2
  H. Udono, I. Kikuma, H. Tajima and K. Takarabe
  Proceedings of Group IV Photonics 2004,HongKong ThP12.

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2003

• Etch Pits Observation and Etching Properties of β-FeSi2
  H. Udono and I. Kikuma
  Mat. Sci. Semicon. Processing, 6 (2003) 413-416.

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• Control of Ga Doping Level in β-FeSi2 using Sn-Ga Solvent
  H. Udono, K. Matsumura, I. J. Ohsugi and I. Kikuma
  Mat. Sci. Semicon. Processing, 6 (2003) 285-287.

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2002

• Solution Growth and Optical Characterization of β-FeSi2 Bulk Crystals
  H. Udono and I. Kikuma
  Jpn. J. Appl. Phys. 41 (2002) L583 -L585.

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• Crystal Growth of β-FeSi2 by Temperature Gradient Solution Growth Method using Zn Solvent
  H. Udono, S. Takaku and I. Kikuma
  J. Crystal Growth 237-239 (2002)1971 -1975.

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2001

• Observation of Etch Pits of β-FeSi2 Single Crystals
  H. Udono and I. Kikuma
  Jpn. J. Appl. Phys. 40 (2001) 4164 -4165.

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• β-FeSi2 Single Crystals Grown from Solution
  H. Udono and I. Kikuma
  Jpn. J. Appl. Phys. 40 (2001)1367-1369.

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• Growth and characterization of Br-doped ZnSe single crystals grown by a vertical sublimation method
  H. Kato, H. Udono and I. Kikuma
  J. Crystal Growth 229 (2001)79-86.

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2000

• Solution Growth of Single-Phase β-FeSi2 Bulk Crystals
  H. Udono and I. Kikuma
  Jpn. J. Appl. Phys. 39 (2000) L225-L226.

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• The effect of (Al, I) impurities and heat treatment on lattice parameter of single crystal ZnSe
  H. Udono, I. Kikuma and Y. Okada
  J. Crystal Growth 214/215 (2000)889-893.

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• Effect of solution thickness on ZnSe crystals grown from Se/Te mixed solutions
  H. Kato, H. Udono and I. Kikuma
  J. Crystal Growth 219 (2000)346-352.

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