Control of Ag acceptor concentration and pn-junction depth in single crystalline Mg2Si photodiodes(Featured Article) Shunya Sakane, Haruhiko Udono AIP Adv. 13, 105307 (2023). (Open Access) DOI:10.1063/5.0172011
Effects of Te-doping on the thermoelectric properties of InGaSb crystals
Nirmal Kumar Velu, Yasuhiro Hayakawa, Haruhiko Udono, and Yuko Inatomi
Effects of Te-doping on the thermoelectric properties of InGaSb crystals N.K.Velu, Y. Hayakawa, H. Udono, Y. Inatomi
Journal of Materials Science: Materials in Electronics, 34, 341480(2023). DOI:10.1007/s10853-023-08546-9
Analysis of grain growth behavior of multicrystalline Mg2Si Takumi Deshimaru, Kenta Yamakoshi, Kentaro Kutsukake, Takuto Kojima, Haruhiko UDONO, and Noritaka Usami Jpn. J. Appl. Phys., 62, SD1002(2023). (Open Access)DOI:10.35848/1347-4065/aca032
Study of deep levels in the Mg2Si grown by vertical Bridgman method Kouki Fukushim, Naoki Mizunuma, Tatsuya Uematsu, Kyoko Shimizu, Takehiro Ota, Isao Tsunoda, Haruhiko UDONO and Kenichiro Takakura Jpn. J. Appl. Phys., 62, SD1012(2023). (Free Article) DOI: 10.35848/1347-4065/aca8b3
2022
Silicon meets group-II metals in energy and electronic applications -How to handle reactive sources for high-quality films (Invited Tutorial) T. Suemasu, K. O. Hara, H. UDONO, M. Imai J. Appl. Phys., 131, 191101 (2022). https://doi.org/10.1063/5.0092080
Effects of dopant type and concentration on surface recombination velocity in hydrogen- terminated silicon Nobue Araki and Haruhiko UDONO Jpn. J. Appl. Phys., 61, 095504(2022).https://doi.org/10.35848/1347-4065/ac829a
Mg2Si 基板開発と赤外線センサへの展開 （解説） 鵜殿治彦 レーザー研究, 50, (2022) pp. 570-574.
2021
Local structure analysis of Sb, Bi, and Ag dopant atoms in Mg2Si semiconductor by X-ray absorption spectroscopy and first- principles calculation (Editor's Pick) M. Kitaura, S. Wantanabe, T. Ina, M. Imai, H. UDONO, M. Ishizaki, H. Yamane, T. Tanimoto, and A. Ohnishi J. Appl. Phys., 130, 245105 (2021).
Single crystal growth of small-angle-grain-boundary-free Mg2Si via vertical Bridgman method R. Masubuchi, B. Alinejad, Y. Hara, H. UDONO J. Crystal Growth., 571, 126258 (2021).
Evaluation of Magnesium Tin Silicide Sintered Bodies Prepared by Liquid-Phase Pressure-Less Sintering H. Inoue, M. Kato, H. UDONO and T. Kobayashi Materials Transaction, 62, 661 (2021).
2020
Interface driven energy-filtering and phonon scattering of polyaniline incorporated ultrathin layered molybdenum disulphide nanosheets for promising thermoelectric performance R. Abinaya a, J. Archana, S. Harish, M. Navaneethan, C. Muthamizhchelvan, S. Ponnusamy, H. UDONO, R. Sugahara, Y. Hayakawa, M. Shimomura J. Colloid and Interface Science, 584, 295-309 (2020).
Power Generation Efficiency of Thermoelectric Elements with a Trapezoidal Section H. Inoue, H. UDONO, M. Kato and T. Kobayashi J. Electric Materials, 50, 346-351 (2020).
First principle band calculations of Mg2Si thin films with (001) and (110) orientations M. Takizawa, T. Komine, H. UDONO, T. Aono JJAP Conf. Proc., 8, 011101 (2020).
Observation of Magnesium-Induced Crystallization (Mg-MIC) of a-Si Thin Film T. Ikehata, R. Sasajima, M. Saijo, N. Sato and H. UDONO JJAP Conf. Proc., 8, 011102 (2020).
2019
Enhanced thermoelectric properties of InSb: Studies on In/Ga doped GaSb/InSb crystals V. Nirmal Kumar, Y. Hayakawa, H. UDONO, Y. Inatomi Intermetallics., 105, 21 (2019); doi: 10.1016/j.intermet.2018.11.006
An Approach to Optimize the Thermoelectric Properties of III–V Ternary InGaSb Crystals by Defect Engineering via Point Defects and Microscale Compositional Segregations V. Nirmal Kumar, Y. Hayakawa, H. UDONO, Y. Inatomi Inorg. Chem., 58, 11579 (2019).
Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy M. Nakamura, S. Murakami and H. UDONO Appl. Phys. Express, 12, 021005 (2019).
Characterization of iron in silicon by low-temperature photoluminescence and deep- level transient spectroscopy Minoru Nakamura, Susumu Murakami and Haruhiko UDONO J. Appl. Phys., 123, 105101 (2018); doi: 10.1063/1.5019958.
Evaluation of carrier lifetime in Mg2Si pn-juction photodiode using OCVD method Haruhiko UDONO and Fumiya Takahashi Proceedings of 8th Silicon Forum, Okayama (2018) PD10.
Crystal growth of Mg2Si for IR-detector spectroscopy Toshio Tokairin, Junya Ikeda, Haruhiko Udono J. Crystal Growth 468 (2017) 761–765. http://dx.doi.org/10.1016/j.jcrysgro.2016.12.004
Influence of Humidity, Volume Density, and MgO Impurity on Mg2Si Thermoelectric-Leg Y. MITO, A. OGINO, S. KONNO, and H. UDONO J. Electron. Mater., 46 (2017)3103-3108. DOI: 10.1007/s11664-016-5182-1
Observation of pn-junction depth in Mg2Si diodes fabricated by short period thermal annealing Y. Onizawa, T. Akiyama, N. Hori, F. Esaka and Haruhiko Udono JJAP Conf. Proc. 5, 011101 (2017) https://doi.org/10.7567/JJAPCP.5.011101.
Fabrication of Mg2Si pn-junction Photodiode with Shallow Mesa-structure and Ring Electrode T. Akiyama, N. Hori, S. Tanigawa, D. Tsuya and Haruhiko Udono JJAP Conf. Proc. , 011102 (2017) https://doi.org/10.7567/JJAPCP.5.011102.
Oxidation resistance of impurity doped Mg2Si grown from the melt Shu Konno, Tsubasa Otubo, Kohei Nakano and Haruhiko Udono JJAP Conf. Proc. 5, 011301 (2017) https://doi.org/10.7567/JJAPCP.5.011301.
Optical transmittance and reflectance studies and evidence of weak electron–phonon interaction in Type-I Ge clathrate Ba8Ga16Ge30 Haruhiko Udono, Motoharu Imai, Shuhei Kojima, Tetsuji Kume, Katsumi Tanigaki, and Hiroyuki Tajima J. Appl. Phys., 121, 175105 (2017); doi: 10.1063/1.4983076.
2016
Transformation of the nickel donor center by annealing in silicon measured by deep-level transient spectroscopy Minoru Nakamura, Susumu Murakami, and Haruhiko Udono Jpn. J. Appl. Phys, 55 (2016) 011302.
Thin film of guest-free type-II silicon clathrate on Si(111) wafer T. Kume, F. Ohashi, K. Sakai, A. Fukuyama, M. Imai, H. Udono, T. Ban, H. Habuchi, H. Suzuki, T. Ikari, S. Sasaki, S. Nonomura Thin Solid Films, 609 (2016) p30-34.
Effects of varying indium composition on the thermoelectric properties of In xGa 1-xSb ternary alloys V. Nirmal Kumar, M. Arivanandan, T. Koyoma, H. Udono, Y. Inatomi, Y. Hayakawa Appl. Phys. A 122(2016)885. DOI 10.1007/s00339-016-0409-9.
Non-destructive depth analysis of the surface oxide layer on Mg 2Si with XPS and XAS Fumitaka Esaka, Takehiro Nojima, Haruhiko Udono, Masaaki Magara and Hiroyuki Yamamoto Surf. Interface Anal., 48 (2016) pp.432-435.
Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono Phys. Status Solidi A, 1–7 (2015) / DOI 10.1002/pssa.201431777.
Growth and characterization of Mg2Si crystals for IR detectors and thermoelectric applications H. Udono, H. Tajima, M. Uchikoshi, M. Itakura Jap. J. Appl. Phys., 54 (2015) 07JB06.
Fabrication and Characterization of Mg2Si pn-junction Photodiode with a Ring Electrode K. Daitoku, M. Takezaki, S. Tanigawa, D. Tsuya, H. Udono JJAP Conf. Proc., 3 (2015) 011103.
Band structure characterization of K8Ga8Si38 clathrates by optical measurement M. Iioka, H. Udono, M. Imai, and M. Aoki JJAP Conf. Proc., 3 (2015) 011201.
Thermal expansion of semiconducting silicides b-FeSi2 and Mg2S Motoharu Imai, Yukihiro Isoda, Haruhiko Udono Intermetallics 67 (2015) 75 -80.
熱電変換材料 実用･活用を目指した設計と開発 "シリサイド半導体による熱電変換デバイス作製に向けた取り組みと課題” 鵜殿治彦（分担執筆） 情報機構 ISBN 978-4-86802-074-8,（2014）執筆pp.205-222.
Convenient Melt-Growth Method for Thermoelectric Mg2Si K. Kambe and H.UDONO J. Electron. Mat.,43 (2014) 2212-2217.
Depth profiles of the nickel donor center in p-type silicon diffused with dilute nickel measured by deep-level transient spectroscopy M.Nakamura, S. Murakami, and H. UDONO Jpn. J. Appl. Phys., 53 (2014) 091301.
Surface aspects of discolouration in Bisphenol A Polycarbonate (BPA-PC), used as lens in LED-based products M. Yazdan Mehr, W.D. van Driel, H. UDONO, G.Q. Zhang Optical Materials 37 (2014) 155-159.
Thermoelectric properties of Na-doped Mg2Si0.25Sn0.75 S. Tada, Y. Isoda, H. UDONO, H. Fujiu, S. Kumagai and Y. Shinohara Trans. Mat. Res. Soc. Jpn., 38 (2013) 17-22.
Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion H.UDONO, Y. Yamanaka, M. Uchikoshi and M. Isshiki J. Phys. Chem. Sol., 74 (2013)311-314.
Energy level(s) of the dissociation product of the 1.014eV photoluminescence copper center in n-type silicon determined by photoluminescence and deep-level transient spectroscopy M.Nakamura, S. Murakami, and H. UDONO J. Appl. Phys., 114 (2013) 033508.
Thermoelectric properties of p-type Mg2Si0.25Sn0.75 doped with sodium acetate and metallic sodium S. Tada, Y. Isoda, H. UDONO, H. Fujiu, S. Kumagai and Y. Shinohara, J. Electron. Mat.,43 (2013) 1580-1584.
Preparation and thermoelectric properties of Mg2Si0.9-xSnxGe0.1 S. Tada, Y. Isoda, H. UDONO, H. Fujiu, S. Kumagai and Y. Shinohara, Phys. Stat. Sol (c), 10 (2013) 1704-1707.
Solid-phase growth of Mg2Si by an- nealing in inert gas atmosphere T. Ikehata, T. Ando, T. Yamamoto, Y. Takagi, N. Sato, and H. UDONO Phys. Stat. Sol (c), 10 (2013) 1708-1711.
Solid evidence for magnetic moment enhancement in micro-particles of Mn11Si19 K. Hammura, H. UDONO, T. Aono Phys. Stat. Sol (c), 10 (2013) 1735-1738.
Solution growth and optical characterization of Mn11Si19 M. Iioka, D. Ishida, S. Kojima and H. UDONO Phys. Stat. Sol (c), 10 (2013) 1808-1811.
Spectral characterization of Mg2Si pn-junction diode depended on RTA periods M. Takezaki, Y. Yamanaka, M. Uchikoshi, H. UDONO Phys. Stat. Sol (c), 10 (2013) 1812-1814.
2012
Preparation and thermoelectric properties of Iron Disilicide Y. ISODA and H.UDONO CRC Handbook “Thermoelectrics and its Energy Harvesting” edited by D. Rowe, Chap.18, CRC Press (2012) .
Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy M. Nakamura, S. Murakami, and H.UDONO Appl. Phys. Lett., 101 (2012)042113.
Transformation reactions of copper centers in the space-charge region of a copper-diffused silicon crystal measured by deep-level transient spectroscopy M.Nakamura, S. Murakami, and H.UDONO J. Appl. Phys., 112 (2012)063530.
Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy K.Noda, Y. Terai, N. Miura, H.UDONO and Y. Fujiwara Phys. Proc., 23 (2012)5-8.
2011
Magnetisation of bulk Mn11Si19 and Mn4Si7 K. Hammura, H. Udono, I. J. Ohsugi , T. Aono , E. De Ranieri Thin Solid Films, 519 (2011) 8516-8519.
Band-gap Modifications of β-FeSi2 Epitaxial Films by Lattice Deformations Y. Terai, K. Noda, K. Yoneda, H. Udono, Y. Maeda, and Y. Fujiwara Thin Solid Films, 519 (2011) 8468-8472.
Photoemission study on the valence band of a ß-FeSi2 thin film using synchrotron radiation H. Fujimoto, K. Ogawa, K. Takarabe, H. Udono, H. Sugiyama, J. Azuma, K. Takahashi and M. Kamada Dalton Trans, 40 (2011)6023-6027.
Semiconducting behavior of type-I Si clathrate K8Ga8Si38 M. Imai, A. Sato, H. Udono, Y. Imai, H. Tajima Dalton Trans. 40 (2011) 4045-4047.
Solution Growth and Thermoelectric Properties of Single-Phase MnSi1.75−x H. Udono, K. Nakamori, Y. Takahashi, Y. Ujiie, I. J. Ohsugi and T. Iida J. Electron. Mat. 40 (2011) 1165-1170.
Surface analysis of single-crystalline β-FeSi2 Y. Yamada, W. Mao, H. Asaoka, H. Yamamoto, F. Esaka, H. Udono and T. Tsuru Phys. Proc. 11(2011) 67-70.
Electrical Properties of Ca2Si Sintered Compact Synthesized by Spark Plasma Sintering C.Wen, T. Nonomura, A. Kato, Y. Kenichi, H. Udono, K. Isobe, M. Otake, Y.Kubota, T. Nakamura, Y. Hayakawa, and H. Tatsuoka Phys. Proc. 11(2011) 106-109.
Surface characterization of homoepitaxial β-FeSi2 film on β-FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy F.Esaka, H. Yamamoto, H. Udono, N. Matsubayashi, K. Yamaguchi, S. Shamoto, M. Magara and T. Kimura Phys. Proc. 11(2011) 150-153.
Preparation of schottky contacts on n-type Mg2Si single crystalline substrate K.Sekino, M.Midonoya, H. Udono, Y. Yamada Phys. Proc. 11(2011) 171-173.
Surface structures of β-FeSi2 formed by heat-treatment in ultra-high vacuum and their influence on homoepitaxial growth S. Matsumura, K. Ochiai, H. Udono, F. Esaka, K. Yamaguchi, H. Yamamoto, K. Houjo Phys. Proc. 11(2011) 174-176.
Effect of temperature modulation during temperature gradient solution growth of β-FeSi2 Y. Ujiie, K. Nakamori, S. Mashiko, H. Udono, T. Nagata Phys. Proc. 11(2011) 177-180.
2009
The local structure of α-FeSi2 under high pressure Y.Mori, H. Nakano, G. Sakane, G. Aquilanti, H. Udono, K. Takarabe Phys. stat. sol. (b), 246(2009) 541-543.
Fluorescence EXAFS study of residual Ga in β-FeSi2 grown from Ga solvent H.Yamada, M.Tabuchi, Y.Takeda, and H.UDONO J. Phys. Conf., 190(2009)012069.
2008
Surface preparation and characterization of single crystalline ß -FeSi2 Y.Yamada, I. Wakaya, S. Ohuchi, H. Yamamoto, H. Asaoka, S. Shamoto, H. Udono Surface Science 602(2008) 3006-3009.
Crystal growth of ZnO bulk by CVT method using PVA Haruhiko Udono,Yusuke Sumi, Shyuji Yamada, and Isao Kikuma J.Crystal Growth, 310(2008) 1827-1831.
Solution Growth and Low-Temperature Thermoelectric Properties of Single Crystalline ß-FeSi2 H. Udono, H. Suzuki, K. Goto, S. Mashiko, M. Uchikoshi and M. Issiki Proceedings of Int. Conf. Thermoelectrics, Cheju , 241.
2007
Polarized optical reflection study on single crystalline ß-FeSi2 Haruhiko Udono, Isao Kikuma, Hiroyuki Tajima , Kenichi Takarabe J. Mat. Sci.: Mat. in Electron., 18(2007)S65-S69.
Single crystalline ß-FeSi2 grown using high-purity FeSi2 source Kouhei Gotoh, Hirokazu Suzuki, Haruhiko Udono, Isao Kikuma, Fumitaka Esaka, Masahito Uchikoshi and Minoru Isshiki Thin Solid Films, 515(2007)8263-8268.
Melt growth and characterization of Mg2Si bulk crystals Daiki Tamura, Ryo Nagai, Kazuhiro Sugimoto, Haruhiko Udono, Isao Kikuma, Hiroyuki Tajima and Isao J. Ohsugi Thin Solid Films, 515(2007)8272-82786.
Preparation of β-FeSi2 substrates by molten salt method M.Okubo, T. Ohishi, A. Mishina, I. Yamauchi, H. Udono, T. Suemasu, T. Matsuyama and H. Tatsuoka Thin Solid Films, 515(2007)8268-8272.
Growth of β-FeSi2 thin films on β-FeSi2 (110) substrates by molecular beam epitaxy M.Muroga, H. Suzuki, H. Udono, I. Kikuma, A. Zhuravlev, K. Yamaguchi, H. Yamamoto and T. Terai Thin Solid Films, 515(2007)8197-8200.
Novel photo-sensitive materials for hydrogen generation through photovoltaic electricity Kenji Yamaguchi, Haruhiko Udono International Journal of Hydrogen Energy, 32(2007)2726-2729.
Solution Growth and Low-Temperature Thermoelectric Properties of Single Crystallineβ-FeSi2 H. Udono, H. Suzuki, K. Goto, S. Mashiko, M. Uchikoshi and M. Issiki Proceedings of ICT2007, Cheju, Korea. 241-244.
Thermoeletric properties of solution grown β-FeSi2 single crystals Hirokazu Suzuki, Haruhiko Udono, Isao Kikuma Mater. Trans., 47(2006)1428-1431.
Solution growth of n-type β-FeSi2 single crystals using Ni-doped Zn solvent H.Udono, Y. Aoki, H. Suzuki, I. Kikuma J.Crystal Growth, 292(2006)290-293.
Effect of thermal annealing on the photoluminescence of β-FeSi2 films on Si substrate Kenji Yamaguchi, Kenichiro Shimura, Haruhiko Udono, Masato Sasase, Hiroyuki Yamamoto, Shin-ichi Shamoto, Kiichi Hojou Thin Solid Films, 508(2005)367-370.
2005
High interband transitions in β-FeSi2 under pressure Yasunobu SUMIDA, Yoshihisa MORI, Kenichi TAKARABE, Haruhiko UDONO, Isao KIKUMA Jpn. J. Appl. Phys., 44(2005)7421-7423.
Solution Growth of high quality p-type β-FeSi2 single crystals using Zn solvent Hauruhiko Udono, Yuta Aoki, Isao Kikuma, Hiroyuki Tajima, Isao J. Ohsugi J. Crystal Growth, 275(2004)e2003-e2007.
Solution growth of N-type β-FeSi2 single crystals using Sn-solvent Haruhiko Udono, Kazutaka Matsumura, Isao J. Osugi, Isao Kikuma J. Crystal Growth, 275(2004)e1967-e1974.
2004
Structural study of FeSi2 under pressure K. Takarabe, T. Ikai, Y. Mori, H. Udono, I. Kikuma J. Appl. Phys., 96(2004)4903.
Reflection and absorption spectra of β-FeSi2 under pressure Y. Mori, Y. Sumida, K. Takarabe, T. Suemasu, F. Hasegawa, H. Udono, I. Kikuma. Thin Solid Films, 461(2004)171-173.
Raman spectra for β-FeSi2 bulk crystals Y. Maeda, H. Udono, Y. Terai Thin Solid Films, 461(2004)165-170.
Structural and electrical properties of β-FeSi2 single crystals grown using Sb solvent H. Kannou, Y. Saito, M. Kuramoto, T. Takeyama, T. Nakamura, T. Matsuyama, H. Udono, Y. Maeda, M. Tanaka, Z. Q. Liu, H. Tatsuoka, H. Kuwabara Thin Solid Films, 461(2004)110-115.
Thermal expansion of β-FeSi2 at low temperatures Y. Terai, H. Ishibashi, Y. Maeda, H. Udono Thin Solid Films, 461(2004)106-109.
Electrical properties of p-type β-FeSi2 single crystals grown from Ga and Zn solvents H. Udono, I. Kikuma Thin Solid Films, 461(2004)188-192.
Optical properties of β-FeSi2 single crystals grown from solutions H. Udono, I. Kikuma, T. Okuno, Y. Masumoto, H. Tajima, S. Komuro Thin Solid Films, 461(2004)182-187.
Anisotropy of refractive index of β-FeSi2 H. Udono, I. Kikuma, H. Tajima and K. Takarabe Proceedings of Group IV Photonics 2004,HongKong ThP12.
2003
Etch Pits Observation and Etching Properties of β-FeSi2 H. Udono and I. Kikuma Mat. Sci. Semicon. Processing, 6 (2003) 413-416.
Control of Ga Doping Level in β-FeSi2 using Sn-Ga Solvent H. Udono, K. Matsumura, I. J. Ohsugi and I. Kikuma Mat. Sci. Semicon. Processing, 6 (2003) 285-287.
2002
Solution Growth and Optical Characterization of β-FeSi2 Bulk Crystals H. Udono and I. Kikuma Jpn. J. Appl. Phys. 41 (2002) L583 -L585.
Crystal Growth of β-FeSi2 by Temperature Gradient Solution Growth Method using Zn Solvent H. Udono, S. Takaku and I. Kikuma J. Crystal Growth 237-239 (2002)1971 -1975.
2001
Observation of Etch Pits of β-FeSi2 Single Crystals H. Udono and I. Kikuma Jpn. J. Appl. Phys. 40 (2001) 4164 -4165.
β-FeSi2 Single Crystals Grown from Solution H. Udono and I. Kikuma Jpn. J. Appl. Phys. 40 (2001)1367-1369.
Growth and characterization of Br-doped ZnSe single crystals grown by a vertical sublimation method H. Kato, H. Udono and I. Kikuma J. Crystal Growth 229 (2001)79-86.
2000
Solution Growth of Single-Phase β-FeSi2 Bulk Crystals H. Udono and I. Kikuma Jpn. J. Appl. Phys. 39 (2000) L225-L226.
The effect of (Al, I) impurities and heat treatment on lattice parameter of single crystal ZnSe H. Udono, I. Kikuma and Y. Okada J. Crystal Growth 214/215 (2000)889-893.
Effect of solution thickness on ZnSe crystals grown from Se/Te mixed solutions H. Kato, H. Udono and I. Kikuma J. Crystal Growth 219 (2000)346-352.
